1 pnz323b (pn323b) pin photodiode for optical control systems pin photodiodes electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i d v r = 10v 5 50 na photo current i l v r = 10v, l = 1000 lx *1 31 a sensitivity to infrared emitters s ir *2 v r = 5v, h = 0.1mw/cm 2 3.2 4 a peak sensitivity wavelength p v r = 10v 970 nm response time t r , t f *3 v r = 10v, r l = 1k ? 50 ns response time t r , t f *3 v r = 10v, r l = 100k ? 5 s capacitance between pins c t v r = 0v, f = 1mhz 70 pf acceptance half angle measured from the optical axis to the half power point 70 deg. *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 light source : = 940 nm *3 switching time measurement circuit 50 ? p = 800nm t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) sig.in "$0+?@ 33 #
?33 #
= 1= ( ' ;( ; ( @$;)) +! $3 .+9 0.2 not soldered 1.5 max. 0.5 1.0 (2) 7.5 0.2 5.5 0.2 6.0 0.2 31.25 1.0 1.5 0.2 22.25 1.0 (1.5) 0.5 1.32 2.54 12 3.8 0.2 (2.3) 0.6 0.1 2- 0.6 0.1 absolute maximum ratings (ta = 25?c) parameter symbol ratings unit reverse voltage (dc) v r 30 v power dissipation p d 100 mw operating ambient temperature t opr C30 to +85 ?c storage temperature t stg C 40 to +100 ?c features fast response which is well suited to high speed modulated light detection : t r , t f = 50 ns (typ.) high sensitivity, high reliability peak sensitivity wavelength matched with infrared light emitting diodes : p = 970 nm (typ.) wide detection area, wide acceptance half angle : = 70 deg. (typ.) adoption of visible light cutoff resin note) the part number in the parenthesis shows conventional part number.
2 pin photodiodes pnz323b v r = 10v i d ta ambient temperature ta (?c ) dark current i d (na) C 40 20 60 100 C 20 04080 10 1 10 C1 10 2 10 3 i l ta 160 140 120 100 80 60 40 20 ambient temperature ta (?c ) relative photo current i l (%) C 20 0 20 60 80 40 100 0 C 40 v r = 10v l = 1000 lx t = 2856k c t v r reverse voltage v r (v) capacitance between pins c t (pf) 100 80 60 40 11010 2 0 20 10 C2 10 C1 spectral sensitivity characteristics 100 80 60 40 20 wavelength (nm) relative sensitivity s (%) 700 800 900 1000 1100 1200 0 600 v r = 10v ta = 25?c ta = 25?c p d ta power dissipation p d (mw) 120 100 80 60 40 20 ambient temperature ta (?c ) 0 20406080100 0 C 30 i l l 10 3 10 2 10 1 illuminance l (lx) photo current i l ( a) 10 2 10 3 10 4 10 C1 10 v r = 10v ta = 25?c t = 2856k 1 10 C1 0 163248 82440 i d v r reverse voltage v r (v) dark current i d (na) 10 10 2 directional characteristics 100 80 60 40 20 0 80 40 0 40 80 angle (deg.) relative sensitivity s (%) t r , t f r l 10 2 10 1 10 C1 external load resistance r l (k ? ) rise time, fall time t r , t f ( s) 11010 2 10 C2 10 C1 10% 90% t d t r t f r l v r = 10v sig. out 50 ? sig.in
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